SiHFB9N30A Description
G S G D S N-Channel MOSFET Third Generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at lower dissipation levels to approximately 50 watts. The low and low package cost of the TO-220 contribute to its wide acceptance...
SiHFB9N30A Key Features
- Dynamic dv/dt Rating
- Repetitive Avalanche Rated
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Lead (Pb)-free Available