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SiHFB9N65A - Power MOSFET

Key Features

  • 650 0.93.
  • Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available.
  • Improved Gate, Avalanche and Dynamic dV/dt RoHS.

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Full PDF Text Transcription for SiHFB9N65A (Reference)

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IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 48 12 19 Single D FEATUR...

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C) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 48 12 19 Single D FEATURES 650 0.93 • Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Lead (Pb)-free Available www.DataSheet4U.

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