SiHFB9N65A Datasheet | Vishay

FEATURES 650 0.93 - Low Gate Charge Qg Results in Simple Drive Requirement Ruggedness Available - Improved Gate, Avalanche and Dynamic d V/dt Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Lead (Pb)-free Available .. TO-220 APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply - High Speed Power Switching S G D S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES - Single Transistor Flyback - Single Transistor Forward ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFB9N65APb F Si HFB9N65A-E3 IRFB9N65A Si HFB9N65A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta EAS IAR EAR TC = 25 °C PD d V/dt TJ, Tstg for 10 s 6-32 or M3 screw VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 650 ± 30 8.5 5.4 21 1.3 325 5.2 16 167 2.8 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 m H, RG = 25 Ω, IAS = 5.2 A (see fig. 12). c. ISD ≤ 5.2 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91104 S-81243-Rev. B, 21-Jul-08 .vishay. 1 IRFB9N65A, Si HFB9N65A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL Rth JA Rth CS Rth JC TYP. 0.50 MAX. 62 0.75 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static .. Drain-Source Breakdown Voltage VDS Temperature...