SiHFB9N30A Datasheet | Vishay

FEATURES 300 0.45 - Dynamic dv/dt Rating Available - Repetitive Avalanche Rated - Fast Switching - Ease of Paralleling - Simple Drive Requirements - Lead (Pb)-free Available Ro HS- PLIANT TO-220 DESCRIPTION S N-Channel MOSFET Third Generation Power MOSFETs from Vishay provides the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at lower dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFB9N30APb F Si HFB9N30A-E3 IRFB9N30A Si HFB9N30A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD d V/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VGS ID IDM LIMIT ± 30 9.3 5.9 37 0.77 160 9.3 9.6 96 4.6 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.7 m H, RG = 25 Ω, IAS = 9.3 A (see fig. 12). c. ISD ≤ 9.3 A, d I/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91102 S-Pending-Rev. A, 03-Jun-08 WORK-IN-PROGRESS .vishay. 1 IRFB9N30A, Si HFB9N30A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case...