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SiHFB9N30A - Power MOSFET

General Description

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • 300 0.45.
  • Dynamic dv/dt Rating Available.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available RoHS.

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Full PDF Text Transcription for SiHFB9N30A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFB9N30A. For precise diagrams, and layout, please refer to the original PDF.

IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 33 6...

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C) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = 10 V 33 6.9 12 Single D FEATURES 300 0.45 • Dynamic dv/dt Rating Available • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available RoHS* COMPLIANT TO-220 DESCRIPTION G S G D S N-Channel MOSFET Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately

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