Datasheet Summary
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Vishay Semiconductors
High Speed Infrared Emitting Diode in T-1¾ Package
Description
TSHF5210 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5210 bines high speed with high radiant power at wavelength of 890 nm.
Features
- High modulation bandwidth
- Extra high radiant power and radiant intensity
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- 94 8390
Low forward voltage Suitable for high pulse current operation Standard package T-1¾ (∅ 5 mm) Angle of half intensity ϕ = ± 10° Peak wavelength λp = 890 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free ponent ponent in...