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TSHF5410 - High Speed Infrared Emitting Diode

Description

TSHF5410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Leads with stand-off.
  • Peak wavelength: λp = 890 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ± 27°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Material categorization: for definitions of compliance ple.

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Datasheet Details

Part number TSHF5410
Manufacturer Vishay
File Size 121.58 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHF5410 Datasheet

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Full PDF Text Transcription

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Please Note PCN-OPT-1275-2023 Valid From 01-Dec-2023 (click here) www.vishay.com TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology 94 8390 DESCRIPTION TSHF5410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ± 27° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.
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