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TSHF5210 - High Speed Infrared Emitting Diode

Description

TSHF5210 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.

TSHF5210 combines high speed with high radiant power at wavelength of 890 nm.

Features

  • High modulation bandwidth.
  • Extra high radiant power and radiant intensity.
  • 94 8390 Low forward voltage Suitable for high pulse current operation Standard package T-1¾ (∅ 5 mm) Angle of half intensity ϕ = ± 10° Peak wavelength λp = 890 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC.

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Datasheet Details

Part number TSHF5210
Manufacturer Vishay
File Size 143.85 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHF5210 Datasheet

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www.DataSheet4U.com TSHF5210 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5210 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5210 combines high speed with high radiant power at wavelength of 890 nm.
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