TSHG8400 - High Speed Infrared Emitting Diode

Vishay Siliconix

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Datasheet Details

Part number	TSHG8400
Manufacturer	Vishay Siliconix
File Size	159.25 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG8400_VishaySiliconix.pdf

TSHG8400 Product details

Description

TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Infrared radiation source for operation with CMOS cameras (illumination) High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG8400 Ie (mW/sr) 70 ϕ (deg) ± 22 λP (nm) 830 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG840

Features

Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC an.

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Published: Feb 2, 2012 |