WFF5N60
Description
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology.
Key Features
- 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 16nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
