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WINSEMI SEMICONDUCTOR

WFF5N60 Datasheet Preview

WFF5N60 Datasheet

Silicon N-Channel MOSFET

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Features
4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V
Ultra-low Gate Charge(Typical 16nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150)
WFF5N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar
stripe, VDMOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for half bridge and full
bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
600
4.5*
3.1*
16*
±30
240
10
4.5
33
0.26
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
3.79
62.5
Units
/W
/W
. Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved
1/7




WINSEMI SEMICONDUCTOR

WFF5N60 Datasheet Preview

WFF5N60 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
VDS = 600 V, VDS = 0 V
IDSS
VDS = 480 V, Tc = 125℃
Drain−source breakdown voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 2.2A
Input capacitance
Ciss VDS = 25 V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS = 0 V,
f = 1 MHz
Rise time
tr VDD =300 V,
Switching time
Turn−on time
Fall time
Turn−off time
ton ID =4.4 A
tf RG=25 Ω
toff (Note4,5)
Total gate charge (gate−source
plus gate−drain)
VDD = 480 V,
Qg
VGS = 10 V,
Gate−source charge
Gate−drain (“miller”) Charge
Qgs ID = 4.4 A
Qgd (Note4,5)
Min
-
±30
-
-
600
2
-
-
-
-
-
-
-
-
-
-
-
WFF5N60
Type Max Unit
- ±100 nA
- -V
- 10 μA
- 100 μA
- -V
- 4V
1.8 2.5 Ω
545 670
70 90 pF
8 11
10 30
35 80
ns
45 100
20 50
16 20
nC
3.4 -
7-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol Test Condition
Min
Continuous drain reverse current
IDR
--
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = 4.4 A, VGS = 0 V
-
Reverse recovery time
Trr
IDR = 4.4 A, VGS = 0 V,
-
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
Type
-
-
-
390
2.2
Max
4.5
17.6
1.4
-
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25
3.ISD≤4.5A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
. Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved
2/7


Part Number WFF5N60
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFF5N60 Datasheet PDF






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