Datasheet Details
| Part number | WFF5N60 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 619.60 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
 WFF5N60 Datasheet
|
|
|
General Description
This Power MOSFET is produced using Winsemi’s advanced Planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
Key Features
- 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V.
- Ultra-low Gate Charge(Typical 16nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃) General.