WT-2300 Description
WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES.
WT-2300 Key Features
- Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS
- 888 144 115
- 31.8 14.5 50.3 31.9 16.8 2.5 5.4 0.825
- nS nS nS nS nc nc nc V
- VGS =4.5V I D =5A