WT-2301 Description
WT-2301 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3.4 AMPERES DRAIN SOURCE V OLTAGE - 20 VOLTAGE 2 SOURCE.
WT-2301 Key Features
- Super high dense cell design for low RDS(ON) R DS(ON) <60 mΩ @VGS =-4.5V R DS(ON) <80 mΩ @VGS =-2.5V R DS(ON) <105 m Ω@V
- 926 183 141
- 13.9 17.6 87.7 53.9 11.9 1.96 3.49 -0.795
- nS nS nS nS nc nc nc V
- I D , DRAIN CURRENT(A) -I D ,DRAIN CURRENT(A)
- VGS , GATE-TO-SOURCE VOLTAGE(V)
- 55 C Tj =125 C
- VGS =1.5V
- VDS , DRAIN-TO-SOURCE VOLTAGE(V)
- C ,CAPACITANCE( PF)