W3E64M72S-XBX - 64Mx72 DDR SDRAM

Description

The 512MByte (4Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits.

Each chip is internally configured as a quad-bank DRAM.

The 512MB DDR SDRAM uses a double data rate ar chi tec ture to achieve high-speed operation.

Features

Data rate = 200, 250, 266 and 333Mbs Package:.
219 Plastic Ball Grid Array (PBGA), 25 x 32mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Programmable Burst length: 2,4 or 8 Bidirectional data strobe (DQS) transmitted/ received with data, i. e. , source-synchronous data capture (one per byte) DQS edge-aligne.

White Electronic

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Datasheet Details

Part number	W3E64M72S-XBX
Manufacturer	White Electronic
File Size	700.18 KB
Description	64Mx72 DDR SDRAM
Datasheet	W3E64M72S-XBX Datasheet
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White Electronic Designs 64Mx72 DDR SDRAM FEATURES Data rate = 200, 250, 266 and 333Mbs Package: • 219 Plastic Ball Grid Array (PBGA), 25 x 32mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) Commands entered on each positive CK edge Internal pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle Programmable Burst length: 2,4 or 8 Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (one per byte) DQS edge-aligned with data for READs; centeraligned with data for WRITEs www.DataSheet4U.com W3E64M72S-XBX ADVANCED* BENEFITS 66% Space Savings vs.

Published: Jun 8, 2007 |