logo

WNM01N11 Datasheet, WillSEMI

WNM01N11 Datasheet, WillSEMI

WNM01N11

datasheet Download (Size : 1.18MB)

WNM01N11 Datasheet

WNM01N11 mosfet

mosfet.

WNM01N11

datasheet Download (Size : 1.18MB)

WNM01N11 Datasheet

WNM01N11 Features and benefits


* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Small package SOT-23-6L Applications
* Driver .

WNM01N11 Application


* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch

WNM01N11 Description

The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit..

Image gallery

WNM01N11 Page 1 WNM01N11 Page 2 WNM01N11 Page 3

TAGS

WNM01N11
MOSFET
WillSEMI

Manufacturer


WillSEMI

Related datasheet

WNM01N10

WNM05N60

WNM05N60F

WNM07N60

WNM07N60F

WNM07N65

WNM07N65F

WNM12N65

WNM12N65F

WNM2016

WNM2020

WNM2020-3

WNM2021

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts