WNM07N60F Datasheet N-Channel MOSFET

Manufacturer: Will Semiconductor

Download the WNM07N60F datasheet PDF. This datasheet also includes the WNM07N60 variant, as both parts are published together in a single manufacturer document.

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WNM07N60F n-channel mosfet by Will Semiconductor - Datasheet Preview — Note: The manufacturer provides a single datasheet file (WNM07N60-WillSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	WNM07N60F
Manufacturer	Will Semiconductor
File Size	1.70 MB
Description	N-Channel MOSFET
Download	WNM07N60F Download (PDF)

General Description

The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.

Overview

WNM07N60/WNM07N60F 600V N-Channel MOSFET.

Key Features

600V@TJ=25°C.
Typ. RDS(on)=1.0 Ω.
Low gate charge.
100% avalanche tested.
100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220 WNM07N60F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM07N60 WNM07N60F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous.

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