WNM07N65 Key Features
- 650V@TJ=25°C
- Typ.RDS(on)=1.0 Ω
- Low gate charge
- 100% avalanche tested
- 100% Rg tested
- Part: WNM07N65
- Manufacturer: Will Semiconductor
- Size: 1.44 MB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNM07N65F | N-Channel MOSFET |
| WNM07N60 | N-Channel MOSFET |
| WNM07N60F | N-Channel MOSFET |
| WNM12N65 | N-Channel MOSFET |
| WNM12N65F | N-Channel MOSFET |
WNM07N65 Description
The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.