WNM12N65 datasheet, mosfet equivalent, Will Semiconductor

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WNM12N65 Features and benefits

* 650V@TJ=25°C
* Typ.RDS(on)=0.57Ω
* Low gate charge
* 100% avalanche tested
* 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F .

WNM12N65 Application

power switching application and a wide variety of other applications. WNM12N65/WNM12N65F Features
* 650V@TJ=25°C <.

WNM12N65 Description

The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power.

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