Datasheet4U Logo Datasheet4U.com

WPM2006 - Power MOSFET and Schottky Diode

Features

  • z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky DFN2.
  • 2 -6L.

📥 Download Datasheet

Datasheet preview – WPM2006

Datasheet Details

Part number WPM2006
Manufacturer WillSEMI
File Size 904.23 KB
Description Power MOSFET and Schottky Diode
Datasheet download datasheet WPM2006 Datasheet
Additional preview pages of the WPM2006 datasheet.

📁 Similar Datasheet

  • WPM2015 - P-Channel MOSFET (Kexin)
  • WPM2015-3 - P-Channel MOSFET (KUU)
  • WPM2341 - P-Channel Enhancement Mode Mosfet (SEMIWILL)
  • WPM2341-3 - P-Channel MOSFET (VBsemi)
  • WPM2341A-3 - P-Channel MOSFET (VBsemi)
  • WPM04-2045A - 4Watts POWER AMPLIFIER (WanTcom)
  • WPM1480 - P-Channel MOSFET (Will Semiconductor)
  • WPM1483 - P-Channel MOSFET (Will Semiconductor)
  • WPM1485 - P-Channel MOSFET (Will Semiconductor)
  • WPM1488 - P-Channel MOSFET (Will Semiconductor)
Other Datasheets by WillSEMI
  • WPM2005 - Power MOSFET and Schottky Diode
  • WPM2005B - Power MOSFET and Schottky Diode
  • WPM2009D - P-MOSFET
  • WPM2014 - Single P-Channel Power MOSFET
  • WPM2015 - Single P-Channel Power MOSFET
  • WPM2019 - Single P-Channel Power MOSFET
  • WPM2026 - Single P-Channel Power MOSFET
  • WPM2031 - Single P-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
WPM2006 Power MOSFET and Schottky Diode WPM2006 Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky DFN2*2 -6L Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted) Parameter DrainŦtoŦSource Voltage GateŦtoŦSource Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C Pulsed Drain Current tp = 10 ms Operating Junct
Published: |