WPM4801 Key Features
- 10V z-30V/-4.0A,RDS(ON)= 45mȍ@VGS=
- 4.5V zSuper high density cell design for extremely low
- 8P package design
- Part: WPM4801
- Manufacturer: WillSEMI
- Size: 806.53 KB
Related WillSEMI Datasheets
| Part Number | Description |
|---|---|
| WPM4803 | MOSFET |
| WPM1481 | Single P-Channel Power MOSFET |
| WPM2005 | Power MOSFET and Schottky Diode |
| WPM2005B | Power MOSFET and Schottky Diode |
| WPM2006 | Power MOSFET and Schottky Diode |
WPM4801 Description
The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching.