WNM12N65F Key Features
- 650V@TJ=25°C
- Typ.RDS(on)=0.57Ω
- Low gate charge
- 100% avalanche tested
- 100% Rg tested
- Part: WNM12N65F
- Manufacturer: Will Semiconductor
- Size: 1.01 MB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNM12N65 | N-Channel MOSFET |
| WNM07N60 | N-Channel MOSFET |
| WNM07N60F | N-Channel MOSFET |
| WNM07N65 | N-Channel MOSFET |
| WNM07N65F | N-Channel MOSFET |
WNM12N65F Description
The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.