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WNM12N65F Datasheet N-Channel MOSFET

Manufacturer: Will Semiconductor

Download the WNM12N65F datasheet PDF. This datasheet also includes the WNM12N65 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (WNM12N65-WillSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number WNM12N65F
Manufacturer Will Semiconductor
File Size 1.01 MB
Description N-Channel MOSFET
Download WNM12N65F Download (PDF)

General Description

The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.

Overview

WNM12N65/WNM12N65F 650V N-Channel MOSFET.

Key Features

  • 650V@TJ=25°C.
  • Typ. RDS(on)=0.57Ω.
  • Low gate charge.
  • 100% avalanche tested.
  • 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N65_3/T TO-220 WNM12N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM12N65 WNM12N65F Drain-Source Voltage Gate-Source Voltage TC=.

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