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WNM4006 Datasheet, Will Semiconductor

WNM4006 Datasheet, Will Semiconductor

WNM4006

datasheet Download (Size : 124.69KB)

WNM4006 Datasheet

WNM4006 mosfet equivalent, n-channel mosfet.

WNM4006

datasheet Download (Size : 124.69KB)

WNM4006 Datasheet

Features and benefits

z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WNM4006 Ht.

Application

z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Marking.

Description

The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit..

Image gallery

WNM4006 Page 1 WNM4006 Page 2 WNM4006 Page 3

TAGS

WNM4006
N-Channel
MOSFET
Will Semiconductor

Manufacturer


Will Semiconductor

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