* -60V, -13A
* RDS(ON) = 90mΩ (Max.) @ VGS = -10V, ID = -10A
* Green Device Available
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* .

, should be limited by total power dissipation Units V μA nA V mΩ S Ω pF pF pF nC nC nC ns ns ns ns A A V WINSEMI MICR.

Silicon P-Channel MOSFET Features
* -60V, -13A
* RDS(ON) = 90mΩ (Max.) @ VGS = -10V, ID = -10A
* Green Device Available
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* Advanced high cell density Trench technology .

SFD601G

SFD602G

SFD603G

SFD604G

SFD605G

SFD606G

SFD607G

SFD608G

SFD60N03L

SFD

SFD-045A

SFD-047A

SFD-048A

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