Datasheet4U Logo Datasheet4U.com

WFD4N65S - Power MOSFET

Description

650V Super-Junction Power MOSFET

Features

  • Ultra low Rdson.
  • Ultra low gate charge (typ. Qg =13nC).
  • 100% UIS tested.
  • RoHS compliant General.

📥 Download Datasheet

Datasheet Details

Part number WFD4N65S
Manufacturer Winsemi
File Size 167.77 KB
Description Power MOSFET
Datasheet download datasheet WFD4N65S Datasheet

📁 Similar Datasheet

  • WFD4N60 - N-Channel MOSFET (Wisdom technologies)
  • WFD430 - N-Channel MOSFET (Wisdom technologies)
  • WFD2N60 - N-Channel MOSFET (Wisdom technologies)
  • WFD5N60 - HIGH VOLTAGE N-Channel MOSFET (Wisdom technologies)
  • WFD5N65L - N-Channel MOSFET (INCHANGE)
  • WFD830B - N-Channel MOSFET (INCHANGE)
Other Datasheets by Winsemi

Full PDF Text Transcription

Click to expand full text
WFD4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � RoHS compliant General Description Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Published: |