silicon n-channel mosfet.
� 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V � Ultra-low Gate Charge(Typical 60nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
.
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well s.
Image gallery
TAGS
Download (Size : 534.08KB)