WFP830 mosfet equivalent, silicon n-channel mosfet.
* 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 32nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temp.
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well s.
Image gallery
TAGS
Download (Size : 495.21KB)