C6D06065Q
C6D06065Q is 6A Silicon Carbide Schottky Diode manufactured by Wolfspeed.
Description
With the performance advantages of a Silicon Carbide (Si C) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. Si C diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In bination with the reduced cooling requirements and improved thermal performance of Si C products, Si C diodes are able to provide lower overall system costs in a variety of diverse applications.
Package Types: QFN 8x8 Marking: C6D06065Q
Features
- Low Forward Voltage (VF) Drop with Positive
Temperature Coefficient
- Zero Reverse Recovery Current / Forward
Recovery Voltage
- Temperature-Independent Switching Behavior
- Low Profile Package with Low Inductance
Typical Applications
- Enterprise Power, Server, & Tele
Power Supplies
- Switched Mode Power Supplies
- Industrial Power Supplies
- Boost Power Factor Correction
- Bootstrap Diode
- LLC Clamping
Maximum Ratings (TC = 25°C Unless Otherwise Specified)
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage
Continuous Forward Current
Non-Repetitive Peak Forward Surge Current Power Dissipation i2t Value
Symbol VRRM VDC IF
IFSM Ptot ∫ i2t
Value 650 650 21 11 6 48 42 62 27 11 8
Unit
Test Conditions
TJ = 25 °C
TJ = 125 °C
A TJ = 155 °C
TC = 25 °C, tp = 10 ms, Half Sine Wave
TC = 110 °C, tp = 10 ms, Half Sine Wave
TJ = 25 °C
TJ = 110 °C
A2s TC = 25 °C, tp = 10 ms TC = 110 °C, tp = 10 ms
Notes Fig. 3 Fig. 4
Rev. 1, November 2024
4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 | wolfspeed./power...
