CAB400M12XM3 module equivalent, half-bridge module.
* High Power Density Footprint
* High Junction Temperature (175 °C) Operation
* Low Inductance (6.7 nH) Design
* Implements Third Generation SiC MOSFET
Te.
* Motor & Traction Drives
* Vehicle Fast Chargers
* Uninterruptable Power Supplies
* Smart-Grid / Grid-T.
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