CAB400M12XM3 Key Features
- High Power Density Footprint
- High Junction Temperature (175 °C) Operation
- Low-Inductance (6.7 nH) Design
- Implements Switching-Optimized Third
- Silicon Nitride Insulator and Copper Baseplate
- 1200 V Drain-Source Voltage
| Part Number | Description |
|---|---|
| CAB425M12XM3 | Half-Bridge Module |
| CAB450M12XM3 | Half-Bridge Module |
| CAB003M09DM3 | Half-Bridge Module |
| CAB004M12GM4 | Half-Bridge Module |
| CAB004M12GM4T | Half-Bridge Module |