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CAB650M17HM3
5
1700 V, 650 A, Silicon Carbide, Half-Bridge Module
D
Technical Features
• Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation
C
VD4S IDS
3 1700 V 2 650 A
V+
G1 K1
Mid
NTC1
G2 K2
-t°
NTC2 V-
Applications
• Railway, Traction, and Motor Drives • EV Chargers • High-Efficiency Converters/Inverters • Renewable Energy • Smart-Grid/Grid-Tied Distributed Generation
System Benefits
1
• Enables Compact, Lightweight Systems
• Increased System Efficiency, due to Lo4 w Switching &
ConduBction Losses of SiC
5
2
• Reduced Thermal Requirements and System Cost
8
6 7
-t°
9 3
Key Parameters
Parameter
A
Symbol Min. Typ. Max.