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GTRA263902FC Datasheet Thermally-enhanced High Power Rf Gan On Sic Hemt

Manufacturer: Wolfspeed

Overview: GTRA263902FC Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690.

General Description

The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications.

It

Key Features

  • input matching, high efficiency, and a thermally-enhanced package with earless flange. Package Types: H-37248C-4 PN: GTRA263902FC Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Efficiency 60 24 40 20 Gain 20 16 0 12 -20 8 -40 4 0 25 PAR @ 0.01% CCDF -60 gtra263902fc_g1 -80 30 35 40 45 50 55 Average Output Power (dBm) Feat.

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