Datasheet Summary
Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495
- 2690 MHz
Description
The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multistandard cellular power amplifier applications. It Features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248C-4 PN: GTRA263902FC
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 200 mA, VGS(PEAK) = -6.0 V, ƒ = 2690 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Efficiency
Gain
-20
-40
0 25
PAR @ 0.01% CCDF
-60...