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GTVA107001FC Datasheet High Power Rf Gan

Manufacturer: Wolfspeed

Overview: GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

GTVA107001EC Package H-36248-2 Gain (dB), Efficiency (%) Power Sweep, Pulsed CW VDS = 50 V, IDQ = 100 mA, 128 µs pulse width, 10% duty cycle, power optimized 80 70 60 50 40 30 20 10 0 Gain: 960 MHz Gain: 1030 MHz Gain: 1090 MHz Gain: 1150 MHz Gain: 1215 MHz Eff: 960 MHz Eff: 1030 MHz Eff: 1090 MHz Eff: 1150 MHz Eff: 1215 MHz 200 400 600 Pout (W) 800 g107001efc-gr3 1000 GTVA107001FC Package H-37248-2

Key Features

  • GaN on SiC HEMT technology.
  • Input matched.
  • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB.
  • Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle.
  • Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001).
  • Pb-free and RoHS-complia.

More Datasheets from Wolfspeed

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GTVA107001FC Distributor