GTVA107001EC Description
The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. 1215 MHz 200 400 600 Pout (W) 800 g107001efc-gr3 1000 GTVA107001FC Package H-37248-2.
GTVA107001EC Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle
- Output power P3dB = 890 W
- Drain efficiency = 75%
- Gain = 18 dB
- Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA
- Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS-pliant
- Unit dB %