GTVA107001EC - High Power RF GaN

Product Overview

Wolfspeed

Part number	GTVA107001EC
Manufacturer	Wolfspeed
File Size	632.40 KB
Description	High Power RF GaN
Datasheet	GTVA107001EC Datasheet
Additional preview pages of the GTVA107001EC datasheet.

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle.
Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001).
Pb-free and RoHS-complia.

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Published: Aug 11, 2020 |