GTVA107001FC Datasheet PDF (High Power RF GaN) | Download Wolfspeed GTVA107001FC

GTVA107001FC - High Power RF GaN

This page provides the datasheet information for the GTVA107001FC, a member of the GTVA107001EC High Power RF GaN family.

Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

Features

GaN on SiC HEMT technology.
Input matched.
Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB.
Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle.
Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001).
Pb-free and RoHS-complia.

Datasheet Details

Part number	GTVA107001FC
Manufacturer	Wolfspeed
File Size	632.40 KB
Description	High Power RF GaN
Datasheet	GTVA107001FC Datasheet
Additional preview pages of the GTVA107001FC datasheet.

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Full PDF Text Transcription

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GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

Published: Aug 11, 2020 |