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GTVA107001FC - High Power RF GaN

Download the GTVA107001FC datasheet PDF. This datasheet also covers the GTVA107001EC variant, as both devices belong to the same high power rf gan family and are provided as variant models within a single manufacturer datasheet.

General Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.

Key Features

  • GaN on SiC HEMT technology.
  • Input matched.
  • Typical pulsed CW performance (class AB), 1030 MHz, 50 V, 128 µs pulse width, 10% duty cycle - Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB.
  • Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle.
  • Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001).
  • Pb-free and RoHS-complia.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GTVA107001EC-Wolfspeed.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Wolfspeed

Part Number Description
GTVA107001EC High Power RF GaN
GTVA104001FA High Power RF GaN
GTVA123501FA Thermally-Enhanced High Power RF GaN
GTVA126001EC Thermally-Enhanced High Power RF GaN HEMT
GTVA126001FC Thermally-Enhanced High Power RF GaN HEMT
GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA355001EC Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA355001FC Thermally-Enhanced High Power RF GaN on SiC HEMT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GTVA107001EC/FC High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Description The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band.