GTVA104001FA Description
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequecy band.
GTVA104001FA Key Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance: pulse width = 128 μs, duty cycle = 10%, DC
- 1.4 GHz, VDS = 50 V, IDQ = 100 mA
- Output power = 400 W
- Drain Efficiency = 70 %
- Gain = 19 dB
- Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Capable of handling 10:1 VSWR (all phase angles) at VDS = 50 V, IDQ = 100 mA, ƒ = 1090 MHz, POUT = 400 W peak
- Pb-free and RoHS pliant