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GTVA104001FA - High Power RF GaN

General Description

The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequecy band.

Key Features

  • input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Performance at 1% Duty Cycle VDS = 50 V, IDQ = 100 mA, 128 µs.
  • 1%, Tflange = 25°C 23 ergoqhgorgn' 2q2pjgfq4po5g 21 20 960 MHz 19 1030 MHz 1150 MHz 18 1215 MHz 1090 MHz 17 g104001fa-gr1 0 50 100 150 200 250 300 350 400 450 500 Output Power (W) GTVA104001FA Package H-37265J-2 Features.
  • GaN on SiC HEMT technology.
  • Input matched.
  • Typical pu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GTVA104001FA Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, DC - 1.4 GHz Description The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. Gain (dB) Performance at 1% Duty Cycle VDS = 50 V, IDQ = 100 mA, 128 µs–1%, Tflange = 25°C 23 ergoqhgorgn' 2q2pjgfq4po5g 21 20 960 MHz 19 1030 MHz 1150 MHz 18 1215 MHz 1090 MHz 17 g104001fa-gr1 0 50 100 150 200 250 300 350 400 450 500 Output Power (W) GTVA104001FA Package H-37265J-2 Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance: pulse width = 128 μs, duty cycle = 10%, DC - 1.