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GTVA263202FC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Description

The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

  • input matching, high efficiency, and a thermallyenhanced surface-mount package with earless flange. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA, ƒ = 2690 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Gain 24 Efficiency 60 40 20 20 16 0 12 -20 8 4 PAR @ 0.01% CCDF -40 -60 0 29 gtva263202fc_g1 -80 33 37 41 45 49 53 Average Output Power (dBm) GTVA263202FC Package H-37248-4 Features.
  • Ga.

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Datasheet Details

Part number GTVA263202FC
Manufacturer Wolfspeed
File Size 384.80 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTVA263202FC Datasheet
Additional preview pages of the GTVA263202FC datasheet.

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Full PDF Text Transcription

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GTVA263202FC Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Description The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced surface-mount package with earless flange. Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA, ƒ = 2690 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 32 80 28 Gain 24 Efficiency 60 40 20 20 16 0 12 -20 8 4 PAR @ 0.
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