Datasheet Summary
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620
- 2690 MHz
Description
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It Features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
GTVA262701FA Package H-87265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz.
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth
20 Gain
Efficiency
60 40 20
12 0
8 PAR @ 0.01% CCDF
-20
4 -40
Features
- GaN on SiC HEMT technology
- Input matched
-...