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GTVA262701FA - Thermally-Enhanced High Power RF GaN on SiC HEMT

Description

The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

Features

  • input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA262701FA Package H-87265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz. 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 20 Gain 16 Efficiency 60 40 20 12 0 8 PAR @ 0.01% CCDF -20 4 -40 Features.
  • GaN on SiC HEMT technology.
  • Input matched.
  • Typical pulsed CW performance: 10 µs puls.

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Datasheet Details

Part number GTVA262701FA
Manufacturer Wolfspeed
File Size 344.96 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTVA262701FA Datasheet
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GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange. GTVA262701FA Package H-87265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz. 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 20 Gain 16 Efficiency 60 40 20 12 0 8 PAR @ 0.
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