GTVA263202FC Overview
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
GTVA263202FC Key Features
- 40 -60
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance, 2690 MHz, 48 V
- Output power at P3dB = 340 W
- Drain efficiency = 70%
- Gain = 16 dB
- Capable of handling 10:1 VSWR @48 V, 80 W (