Datasheet Summary
Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620
- 2690 MHz
Description
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It Features input matching, high efficiency, and a thermallyenhanced surface-mount package with earless flange.
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(M) = 200 mA, IDQ(PK) = 200 mA,
ƒ = 2690 MHz 3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
32 80
Gain
Efficiency
60 40
20 20
16 0
12 -20
8 4 PAR @ 0.01% CCDF
-40 -60
0 29 gtva263202fc_g1
-80
33 37 41 45 49 53
Average...