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GTVA263202FC Datasheet

Manufacturer: Wolfspeed
GTVA263202FC datasheet preview

Datasheet Details

Part number GTVA263202FC
Datasheet GTVA263202FC-Wolfspeed.pdf
File Size 384.80 KB
Manufacturer Wolfspeed
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA263202FC page 2 GTVA263202FC page 3

GTVA263202FC Overview

The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.

GTVA263202FC Key Features

  • 40 -60
  • GaN on SiC HEMT technology
  • Input matched
  • Typical pulsed CW performance, 2690 MHz, 48 V
  • Output power at P3dB = 340 W
  • Drain efficiency = 70%
  • Gain = 16 dB
  • Capable of handling 10:1 VSWR @48 V, 80 W (
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