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ZXT13N50DE6 - 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

General Description

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses.

This makes it ideal for high efficiency, low voltage switching applications.

Overview

ZXT13N50DE6 SuperSOT4™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC=.

Key Features

  • Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=4A Continuous Collector Current SOT23-6 package SOT23-6.