50V Datasheet | Specifications & PDF Download

7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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AUO Confidential For DATAMODUL Internal Use Only On 2014/07/03 □ Preliminary Specification ■ Final Specification Module Model Name 5.0 Inch Color T

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8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by

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AUO Confidential For DATAMODUL Internal Use Only On 2016/07/22 □Preliminary Specifications ■Final Specifications Module Model Name 5.0 Inch Color T

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PL90N25T63 PL90N25T47 PL90N25T2 Feature ◇ High Speed Power Smooth Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇

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OB2136 650V 3-Phase Half-Bridge Gate-Driver IC General Description OB2136 is a monolithic three-phase half-bridge gate driver IC designed for high vo

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FDB0630N1507L N-Channel PowerTrench® MOSFET September 2016 FDB0630N1507L N-Channel PowerTrench® MOSFET 150 V, 130 A, 6.4 mΩ Features General Descr

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PL90N25T63 PL90N25T47 PL90N25T2 Feature ◇ High Speed Power Smooth Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇

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I06N60T-VB I06N60T-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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MOSFET – N-Channel, POWERTRENCH) 150 V, 37 A, 36 mW FDP2552, FDB2552 Features • RDS(on) = 32 mW (Typ.), VGS = 10 V, ID = 16 A • Qg(tot) = 39 nC (Typ.

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FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench® MOSFET 150 V, 50

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GEN2 SiC Schottky Diode LSIC2SD065E20CCA, 650 V, 20 A, TO-247-3L LSIC2SD065E20CCA 650 V, 20 A SiC Schottky Barrier Diode RoHS Pb Circuit Diagram TO-

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SPTP15R7D5 150V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=4.95mΩ@VGS=10V  Low Gate Charge Minimize Switch

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SMF20N65-Z 650V N-Channel MOSFET ●Features： ■ 20.0A, 650V, RDS(on)(Typ) =380mΩ@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Sw

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HGW105N15SL P-1 Feature ◇ High Speed Power Smooth Switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 10

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

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4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced u

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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