900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






etcTI

CSD25481F4T Datasheet Preview

CSD25481F4T Datasheet

P-Channel Power MOSFET

No Preview Available !

Product
Folder
Order
Now
Technical
Documents
Tools &
Software
Support &
Community
CSD25481F4
SLPS420E – SEPTEMBER 2013 – REVISED DECEMBER 2017
CSD25481F4 20 V P-Channel FemtoFET™ MOSFET
1 Features
1 Ultra-Low On Resistance
• Ultra-Low Qg and Qgd
• High Operating Drain Current
• Ultra-Small Footprint (0402 Case Size)
– 1 mm × 0.6 mm
• Ultra-Low Profile
– 0.35 mm Max Height
• Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and Halogen Free
• RoHS Compliant
2 Applications
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Battery Applications
• Handheld and Mobile Applications
3 Description
This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
Typical Part Dimensions
0.35 mm
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (–4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source
On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
–20
913
153
VGS = –1.8 V 395
VGS = –2.5 V 145
VGS = –4.5 V 90
–0.95
UNIT
V
pC
pC
m
m
m
V
Device
CSD25481F4
CSD25481F4T
Ordering Information(1)
Qty Media
Package
3000
250
7-Inch
Reel
7-Inch
Reel
Femto(0402)
1.0 mm × 0.6 mm
Land Grid Array (LGA)
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C unless otherwise stated
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM
Pulsed Drain Current(2)
Continuous Gate Clamp Current
IG
Pulsed Gate Clamp Current(2)
PD
Power Dissipation(1)
Human Body Model (HBM)
V (ESD) Charged Device Model (CDM)
VALUE
–20
–12
–2.5
–13.1
–35
–350
500
4
2
UNIT
V
V
A
A
mA
mW
kV
kV
TJ,
Operating Junction and
Tstg Storage Temperature Range
–55 to 150 °C
(1) Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration 100 μs, duty cycle 1%.
Top View
0.60 mm
.
.
1.00 mm
D
GS
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.




etcTI

CSD25481F4T Datasheet Preview

CSD25481F4T Datasheet

P-Channel Power MOSFET

No Preview Available !

CSD25481F4
SLPS420E – SEPTEMBER 2013 – REVISED DECEMBER 2017
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Specifications......................................................... 3
5.1 Electrical Characteristics........................................... 3
5.2 Thermal Information .................................................. 3
5.3 Typical MOSFET Characteristics.............................. 4
6 Device and Documentation Support.................... 7
6.1 Community Resources.............................................. 7
6.2 Trademarks ............................................................... 7
6.3 Electrostatic Discharge Caution ................................ 7
6.4 Glossary .................................................................... 7
7 Mechanical, Packaging, and Orderable
Information ............................................................. 8
7.1 Mechanical Dimensions ............................................ 8
7.2 Recommended Minimum PCB Layout...................... 9
7.3 Recommended Stencil Pattern ................................. 9
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (October 2014) to Revision E
Page
• Changed the Pulsed Drain Current value From: –10 A To: –13.1 A in the Absolute Maximum Ratings table ..................... 1
• Changed Note 1 From: Typical RθJA = 85°C/W To: Typical RθJA = 90°C/W ........................................................................... 1
• Changed Note 2 From: Pulse duration 300 μs, duty cycle 2% To: Pulse duration 100 μs, duty cycle 1% ............... 1
• Changed the typical RθJA values in the Thermal Information table ........................................................................................ 3
• Updated Figure 1. .................................................................................................................................................................. 4
• Updated Figure 10 with newly measured data. ..................................................................................................................... 5
• Added Community Resources. .............................................................................................................................................. 7
• Updated all mechanical drawings, increased the size of the pads in the Recommended Stencil Pattern section. .............. 8
Changes from Revision C (February 2014) to Revision D
Page
• Corrected timing VDS to read –10 V. ...................................................................................................................................... 3
Changes from Revision B (February 2013) to Revision C
Page
• Corrected capacitance units to read pF in Figure 5. ............................................................................................................. 5
Changes from Revision A (December 2013) to Revision B
Page
• Updated lead and halogen free in features. .......................................................................................................................... 1
• Added IG parameter. .............................................................................................................................................................. 1
• Lowered IDSS limit. ................................................................................................................................................................. 3
• Lowered IGSS limit. ................................................................................................................................................................. 3
Changes from Original (September 2013) to Revision A
Page
• Took out jumbo reel info and added small reel info. ............................................................................................................. 1
• Removed UIS graph. ............................................................................................................................................................. 5
2
Submit Documentation Feedback
Copyright © 2013–2017, Texas Instruments Incorporated
Product Folder Links: CSD25481F4


Part Number CSD25481F4T
Description P-Channel Power MOSFET
Maker etcTI
PDF Download

CSD25481F4T Datasheet PDF






Similar Datasheet

1 CSD25481F4 P-Channel Power MOSFET
etcTI
2 CSD25481F4T P-Channel Power MOSFET
etcTI





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy