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CSD25481F4T - P-Channel Power MOSFET

Download the CSD25481F4T datasheet PDF. This datasheet also covers the CSD25481F4 variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Key Features

  • 1 Ultra-Low On Resistance.
  • Ultra-Low Qg and Qgd.
  • High Operating Drain Current.
  • Ultra-Small Footprint (0402 Case Size).
  • 1 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CSD25481F4-etcTI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25481F4 SLPS420E – SEPTEMBER 2013 – REVISED DECEMBER 2017 CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features •1 Ultra-Low On Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-Low Profile – 0.