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CSD25481F4T Key Features

  • 1 Ultra-Low On Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint (0402 Case Size)
  • 1 mm × 0.6 mm
  • Ultra-Low Profile
  • 0.35 mm Max Height
  • Integrated ESD Protection Diode
  • Rated >4 kV HBM
  • Rated >2 kV CDM

Related Texas Instruments Datasheets

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CSD25481F4 P-Channel Power MOSFET
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CSD25483F4T P-Channel Power MOSFET

CSD25481F4T Description

This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.

CSD25481F4T Applications

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching