* N-channel： VDS =40V，ID =10A RDS(ON)=15.5mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4.5V P-Channel： VDS =-40V，ID =-10A RDS(ON)=29mΩ (typical) @ VGS=-10V RD.

General Features
* N-channel： VDS =40V，ID =10A RDS(ON)=15.5mΩ (typical) @ VGS=10V RDS(ON)=20mΩ (typical) @ VGS=4..

Schematic diagram The NP4614QR uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Feature.

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