* N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ VGS=4.5V P-Channel： VDS =-30V，ID =-12A RDS(ON)=28mΩ (typical) @ VGS=-10V RDS(.

D1/D2 General Features
* N-channel： VDS =30V，ID =12A RDS(ON)=17mΩ (typical) @ VGS=10V RDS(ON)=25mΩ (typical) @ V.

Schematic diagram The NP4606G uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. D1/D2 General F.

NP4614QR

NP4008SR

NP40N055CLE

NP40N055DLE

NP40N055ELE

NP40N055KLE

NP40N055MLE

NP40N055NLE

NP40N10PDF

NP40N10VDF

NP40N10YDF

NP4201MF02

NP4203MF02