GAN039-650NBBA
GAN039-650NBBA is GaN FET manufactured by Nexperia.
description
The GAN039-650NBBA is an Automotive qualified 650 V, 33 mΩ Gallium Nitride (Ga N) FET in a CCPAK1212 package. It is a normally-off device that bines Nexperia’s latest high-voltage Ga N HEMT H2 technology and low-voltage silicon MOSFET technologies
- offering superior reliability and performance.
This product has been fully designed and qualified to meet AEC-Q101 requirements.
2. Features and benefits
- Fully automotive qualified to AEC-Q101:
- 175 °C rating suitable for thermally demanding environments
- Simplified driver design as standard level MOSFET gate drivers can be used:
- 0 V to 12 V drive voltage
- Gate threshold voltage VGSth of 4 V
- Robust gate oxide with ±20 V VGS rating
- High gate threshold voltage of 4 V for gate bounce immunity
- Low body diode Vf for reduced losses and simplified dead-time adjustments
- Transient over-voltage capability for increased robustness
- CCPAK package technology:
- Improved reliability, with reduced Rth(j-mb) for optimal cooling
- Lower inductances for lower switching losses and EMI
- 175 °C maximum junction temperature
- High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
- Visual (AOI) soldering inspection, no need for expensive x-ray equipment
- Easy solder wetting for good mechanical solder joints
3. Applications
- Automotive On-Board-Charger systems
- Automotive DC-DC
- Hard and soft switching converters for industrial and data power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Conditions -55 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C Tmb = 25 °C; Fig. 1
Min Typ Max Unit
- -
650 V
-...
