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GAN063-650WSA - GaN FET

General Description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET.

offering superior reliability and performance.

2.

Key Features

  • Ultra-low reverse recovery charge.
  • Simple gate drive (0 V to +10 V or 12 V).
  • Robust gate oxide (±20 V capability).
  • High gate threshold voltage (+4 V) for very good gate bounce immunity.
  • Very low source-drain voltage in reverse conduction mode.
  • Transient over-voltage capability (800 V) 3.

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GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET 20 March 2020 Product data sheet 1. General description The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. 2. Features and benefits • Ultra-low reverse recovery charge • Simple gate drive (0 V to +10 V or 12 V) • Robust gate oxide (±20 V capability) • High gate threshold voltage (+4 V) for very good gate bounce immunity • Very low source-drain voltage in reverse conduction mode • Transient over-voltage capability (800 V) 3.