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GAN063-650WSA - GaN FET

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nexperia

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GAN063-650WSA GaN FET by nexperia - Datasheet Preview — Datasheet preview – GAN063-650WSA

Datasheet Details

Part number	GAN063-650WSA
Manufacturer	nexperia
File Size	282.06 KB
Description	GaN FET
Datasheet	GAN063-650WSA Datasheet
Additional preview pages of the GAN063-650WSA datasheet.

Product details

Description

The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. offering superior reliability and performance.

Features

Ultra-low reverse recovery charge.
Simple gate drive (0 V to +10 V or 12 V).
Robust gate oxide (±20 V capability).
High gate threshold voltage (+4 V) for very good gate bounce immunity.
Very low source-drain voltage in reverse conduction mode.
Transient over-voltage capability (800 V) 3.

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Published: Apr 4, 2020 |