900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






nexperia

GAN063-650WSA Datasheet Preview

GAN063-650WSA Datasheet

GaN FET

No Preview Available !

GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
20 March 2020
Product data sheet
1. General description
The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that
combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET
technologies — offering superior reliability and performance.
2. Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability (800 V)
3. Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Source-drain diode
Qr recovered charge
Conditions
-55 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 25 A; Tj = 25 °C
ID = 25 A; VDS = 400 V; VGS = 10 V;
Tj = 25 °C
IS = 25 A; dIS/dt = -1000 A/µs;
VGS = 0 V; VDS = 400 V; Fig. 14
Min Typ Max Unit
- - 650 V
- - 34.5 A
- - 143 W
-55 -
175 °C
- 50 60 mΩ
- 4 - nC
- 15 - nC
- 125 - nC




nexperia

GAN063-650WSA Datasheet Preview

GAN063-650WSA Datasheet

GaN FET

No Preview Available !

Nexperia
GAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1G
gate
mb
2S
source
3D
drain
mb S
mounting base; connected
to source
123
TO-247 (SOT429)
Graphic symbol
D
G
S
aaa-028116
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
GAN063-650WSA
TO-247
Description
plastic, single-ended through-hole package; 3 leads; 5.45 mm
pitch; 20.45 mm x 15.6 mm x 4.95 mm body
Version
SOT429
7. Marking
Table 4. Marking codes
Type number
GAN063-650WSA
Marking code
GAN063-650WSA
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VTDS
drain-source voltage
transient drain to source
voltage
-55 °C ≤ Tj ≤ 175 °C
pulsed; tp = 1 µs; δfactor = 0.01
VGS
Ptot
ID
IDM
Tstg
Tj
Tsld(M)
gate-source voltage
total power dissipation
drain current
peak drain current
storage temperature
junction temperature
peak soldering
temperature
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Source-drain diode
IS
source current
Tmb = 25 °C; VGS = 0 V
Min Max Unit
- 650 V
- 800 V
-20 20
V
- 143 W
- 34.5 A
- 24.4 A
- 150 A
-55 175 °C
-55 175 °C
- 260 °C
- 34.5 A
GAN063-650WSA
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2020
© Nexperia B.V. 2020. All rights reserved
2 / 11


Part Number GAN063-650WSA
Description GaN FET
Maker nexperia
PDF Download

GAN063-650WSA Datasheet PDF






Similar Datasheet

1 GAN063-650WSA GaN FET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy