GAN080-650EBE Datasheet | Nexperia

description The GAN080-650EBE is a general purpose 650 V, 80 mΩ Gallium Nitride (Ga N) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits - Enhancement mode - normally-off power switch - Ultra high frequency switching capability - No body diode - Low gate charge, low output charge - Qualified for standard applications - ESD protection - Ro HS, Pb-free, REACH-pliant - High efficiency and high power density - Low package inductance and low package resistance 3. Applications - High power density and high efficiency power conversion - AC-to-DC converters, totem pole PFC - DC-to-DC converters - Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers - Data and tele (AC-to-DC and DC-to-DC) converters - Motor drives - Solar (PV) inverters - Class D audio amplifiers, TV PSU and LED drivers 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS VTDS drain-source voltage transient drain to source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Conditions -55 °C ≤ Tj ≤ 150 °C pulsed; tp = 1 µs; δfactor = 0.01 VGS = 6 V; Tmb = 25 °C [1] Tmb = 25 °C; Fig. 1 VGS = 6 V; ID = 8 A; Tj = 25 °C; Fig. 11; Fig. 12; Fig. 13 VGS = 6 V; ID = 8 A; Tj = 150 °C; Fig. 11; Fig. 14 Min Typ Max Unit -...