GAN7R0-150LBE Datasheet | Nexperia

description The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (Ga N) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits - Enhancement mode - normally-off power switch - Ultra high frequency switching capability - No body diode - Low gate charge, low output charge - Qualified for standard applications - ESD protection - Ro HS, Pb-free, REACH-pliant - High efficiency and high power density - Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm 3. Applications - High power density and high efficiency power conversion - AC-to-DC converters, (secondary stage) - High frequency DC-to-DC converters in 48 V systems - 400 V to 48 V LLC converters, secondary (rectification) side - Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers - Data and tele (AC-to-DC and DC-to-DC) converters - Motor drives - Li DAR (non-automotive) - Class D audio amplifiers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage VTDS transient drain to source voltage pulsed; tp = 1 µs; δfactor = 0.01 ID drain current VGS = 5 V [1] Ptot total power dissipation Fig. 1 Tj junction temperature Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 10 A; Tj = 25 °C; Fig. 9; resistance Fig. 10; Fig. 11; Fig. 12 RG gate resistance f = 5 MHz; Tj = 25 °C Min Typ Max...