GANB4R8-040CBA
GANB4R8-040CBA is Gallium Nitride (GaN) FET manufactured by Nexperia.
40 V, 4.8 m Ohm bi-directional Gallium Nitride (Ga N) FET in a
2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)
10 April 2024
Product data sheet
1. General description
The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (Ga N) High Electron Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance.
2. Features and benefits
- Enhancement mode
- normally-off power switch
- Bi-directional device
- Ultra high switching speed capability
- Ultra-low on-state resistance
- Ro HS, Pb-free, REACH-pliant
- High efficiency and high power density
- Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm
3. Applications
- High-side load switch
- OVP protection in smart phone USB port
- Power switch circuits
- Stand-by power system
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDD drain-drain voltage
-40 °C ≤ Tj ≤ 125 °C
[1]
-...
