• Part: GANB4R8-040CBA
  • Manufacturer: Nexperia
  • Size: 1.22 MB
Download GANB4R8-040CBA Datasheet PDF
GANB4R8-040CBA datasheet preview
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GANB4R8-040CBA Key Features

  • Enhancement mode
  • normally-off power switch
  • Bi-directional device
  • Ultra high switching speed capability
  • Ultra-low on-state resistance
  • RoHS, Pb-free, REACH-pliant
  • High efficiency and high power density
  • Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm

Related Nexperia Datasheets

Part Number Description
GANB012-040CBA bi-directional Gallium Nitride FET
GANB8R0-040CBA 40V bi-directional Gallium Nitride FET
GAN039-650NBB Gallium Nitride (GaN) FET
GAN039-650NBBA GaN FET
GAN039-650NTB Gallium Nitride (GaN) FET

GANB4R8-040CBA Description

The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance.