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GANB4R8-040CBA - Gallium Nitride (GaN) FET

GANB4R8-040CBA Description

GANB4R8-040CBA 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) 10 April 2024 P.
The GANB4R8-040CBA is a 40 V, 4.

GANB4R8-040CBA Features

* Enhancement mode - normally-off power switch
* Bi-directional device
* Ultra high switching speed capability
* Ultra-low on-state resistance
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level Chip-Scale Pa

GANB4R8-040CBA Applications

* High-side load switch
* OVP protection in smart phone USB port
* Power switch circuits
* Stand-by power system 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDD drain-drain voltage -40 °C ≤ Tj ≤ 125 °C [

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