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GANB012-040CBA - bi-directional Gallium Nitride FET

Product Overview

nexperia

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GANB012-040CBA bi-directional Gallium Nitride FET by nexperia - Datasheet Preview — Datasheet preview – GANB012-040CBA

Datasheet Details

Part number	GANB012-040CBA
Manufacturer	nexperia
File Size	903.12 KB
Description	bi-directional Gallium Nitride FET
Datasheet	GANB012-040CBA Datasheet
Additional preview pages of the GANB012-040CBA datasheet.

Product details

Description

The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

Features

Enhancement mode - normally-off power switch.
Bi-directional device.
Ultra high switching speed capability.
Ultra-low on-state resistance.
RoHS, Pb-free, REACH-compliant.
High efficiency and high power density.
Wafer Level Chip-Scale Package (WLCSP) 1.2 mm x 1.7 mm 3.

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Published: Apr 23, 2025 |