Datasheet4U Logo Datasheet4U.com

GANB012-040CBA - bi-directional Gallium Nitride FET

General Description

The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

It is a normally-off emode device offering superior performance.

2.

Key Features

  • Enhancement mode - normally-off power switch.
  • Bi-directional device.
  • Ultra high switching speed capability.
  • Ultra-low on-state resistance.
  • RoHS, Pb-free, REACH-compliant.
  • High efficiency and high power density.
  • Wafer Level Chip-Scale Package (WLCSP) 1.2 mm x 1.7 mm 3.

📥 Download Datasheet

Other Datasheets by Nexperia

Part Number Description
GANB4R8-040CBA Gallium Nitride (GaN) FET
GANB8R0-040CBA 40V bi-directional Gallium Nitride FET
GAN039-650NBB Gallium Nitride (GaN) FET
GAN039-650NBBA GaN FET
GAN039-650NTB Gallium Nitride (GaN) FET
GAN041-650WSB GaN FET
GAN063-650WSA GaN FET
GAN080-650EBE GaN FET
GAN111-650WSB Gallium Nitride (GaN) FET
GAN140-650EBE GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WLCSP12 GANB012-040CBA 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 12 March 2025 Product data sheet 1. General description The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Bi-directional device • Ultra high switching speed capability • Ultra-low on-state resistance • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Wafer Level Chip-Scale Package (WLCSP) 1.2 mm x 1.7 mm 3.