GANB8R0-040CBA Overview
The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance.
GANB8R0-040CBA Key Features
- Enhancement mode
- normally-off power switch
- Bi-directional device
- Ultra high switching speed capability
- Ultra-low on-state resistance
- RoHS, Pb-free, REACH-pliant
- High efficiency and high power density
- Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm