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GANB8R0-040CBA - 40V bi-directional Gallium Nitride FET

Product Overview

nexperia

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GANB8R0-040CBA 40V bi-directional Gallium Nitride FET by nexperia - Datasheet Preview — Datasheet preview – GANB8R0-040CBA

Datasheet Details

Part number	GANB8R0-040CBA
Manufacturer	nexperia
File Size	956.86 KB
Description	40V bi-directional Gallium Nitride FET
Datasheet	GANB8R0-040CBA Datasheet
Additional preview pages of the GANB8R0-040CBA datasheet.

Product details

Description

The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

Features

Enhancement mode - normally-off power switch.
Bi-directional device.
Ultra high switching speed capability.
Ultra-low on-state resistance.
RoHS, Pb-free, REACH-compliant.
High efficiency and high power density.
Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm 3.

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Published: Apr 23, 2025 |