• Part: GANB8R0-040CBA
  • Manufacturer: Nexperia
  • Size: 956.86 KB
Download GANB8R0-040CBA Datasheet PDF
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GANB8R0-040CBA Key Features

  • Enhancement mode
  • normally-off power switch
  • Bi-directional device
  • Ultra high switching speed capability
  • Ultra-low on-state resistance
  • RoHS, Pb-free, REACH-pliant
  • High efficiency and high power density
  • Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm

Related Nexperia Datasheets

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GANB4R8-040CBA Gallium Nitride (GaN) FET
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GAN039-650NBBA GaN FET
GAN039-650NTB Gallium Nitride (GaN) FET

GANB8R0-040CBA Description

The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance.