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GANB8R0-040CBA - 40V bi-directional Gallium Nitride FET

General Description

The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package.

It is a normally-off emode device offering superior performance.

2.

Key Features

  • Enhancement mode - normally-off power switch.
  • Bi-directional device.
  • Ultra high switching speed capability.
  • Ultra-low on-state resistance.
  • RoHS, Pb-free, REACH-compliant.
  • High efficiency and high power density.
  • Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WLCSP16 GANB8R0-040CBA 40 V, 8.0 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.7 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) 31 January 2025 Product data sheet 1. General description The GANB8R0-040CBA is a 40 V, 8.0 mΩ bi-directional Gallium Nitride (GaN) High ElectronMobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Bi-directional device • Ultra high switching speed capability • Ultra-low on-state resistance • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm 3.