Datasheet4U Logo Datasheet4U.com

PBSS303PX - PNP Transistor

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS303NX.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📥 Download Datasheet

Datasheet preview – PBSS303PX

Datasheet Details

Part number PBSS303PX
Manufacturer nexperia
File Size 173.59 KB
Description PNP Transistor
Datasheet download datasheet PBSS303PX Datasheet
Additional preview pages of the PBSS303PX datasheet.

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PBSS303PX 30 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303NX. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ DC-to-DC conversion „ MOSFET gate driving „ Motor control „ Charging circuits „ Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1.
Published: |