• Part: PBSS303PX
  • Manufacturer: Nexperia
  • Size: 173.59 KB
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PBSS303PX Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Other PBSS303PX Datasheets

Manufacturer Part Number Description
NXP Logo NXP Semiconductors PBSS303PD 3A PNP low VCEsat (BISS) transistor
NXP Logo NXP Semiconductors PBSS303NX 5.1A NPN transistor

PBSS303PX Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.