Part number:
PE10N10
Manufacturer:
semi one
File Size:
837.31 KB
Description:
N-channel enhancement mode power mosfet.
* VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolo
PE10N10
semi one
837.31 KB
N-channel enhancement mode power mosfet.
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