PE10N10
PE10N10 is N-Channel Enhancement Mode Power MOSFET manufactured by semi one.
N-Channel Enhancement Mode Power MOSFET
Description
The PE10N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Schematic diagram
Application
- Power switching application
- Hard switched and high frequency circuits
- Marking and pin assignment
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