PE30H15K - N-Channel Enhancement Mode Power MOSFET

Description

The PE30H15k uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =150A RDS(ON).

semi one

📥 Download Datasheet

Datasheet Details

Part number	PE30H15K
Manufacturer	semi one
File Size	957.87 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE30H15K Datasheet
Additional preview pages of the PE30H15K datasheet.

📁 Similar Datasheet

PE300B-10UV - CERMAX FOCUSED XENON ARC LAMPS (PerkinElmer Optoelectronics)
PE300BF - CERMAX XENON ARC LAMPS (PerkinElmer Optoelectronics)
PE300BUV - CERMAX XENON ARC LAMPS (PerkinElmer Optoelectronics)
PE300C-10F - CERMAX FOCUSED XENON ARC LAMPS (PerkinElmer Optoelectronics)
PE3010 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE30100K - N-Channel Power MOSFET (ChipSourceTek)
PE3024KC - N and P Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE308N - Diode (Nihon Inter Electronics)
PE30D10 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE30P11DS - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)

Other Datasheets by semi one

PE30H15 - N-Channel Enhancement Mode Power MOSFET
PE3010 - N-Channel Enhancement Mode Power MOSFET
PE30100K - N-Channel Enhancement Mode Power MOSFET
PE3018U - N-Channel Enhancement Mode Power MOSFET
PE3050K - N-Channel Enhancement Mode Power MOSFET
PE3080K - N-Channel Enhancement Mode Power MOSFET
PE30P12S - P-Channel Enhancement Mode Power MOSFET
PE30P80K - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

N-Channel Enhancement Mode Power MOSFET Description The PE30H15k uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. PE30H15K General Features ● VDS =30V,ID =150A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.

Published: Dec 3, 2018 |