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PE4946 Datasheet Preview

PE4946 Datasheet

N-Channel Enhancement Mode Power MOSFET

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PE4946
N-Channel Enhancement Mode Power MOSFET
Description
The PE4946 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =4.5A
RDS(ON) < 45m@ VGS=10V
Typ38m
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
SOP-8 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
4.5
3.0
20
2
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
62.5 /W
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semi one

PE4946 Datasheet Preview

PE4946 Datasheet

N-Channel Enhancement Mode Power MOSFET

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Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4.5A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=5V,ID=4.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDs=30V,ID=4.5A
VGS=10V,RGEN=3
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=4.5A,
Qgs
VGS=10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=3.7A
IS
PE4946
Min Typ Max Unit
60 69
-
--
1
- - ±100
V
μA
nA
1.2 2.0
38
11 -
2.5
45
-
V
m
S
450 PF
60 PF
25 PF
- 4.7
- 2.3
- 15.7
- 1.9
- 8.5
- 1.6
- 2.2
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
4
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
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Page 2


Part Number PE4946
Description N-Channel Enhancement Mode Power MOSFET
Maker semi one
Total Page 6 Pages
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